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Package Marking and Ordering Infomation
Part Number
FDA38N30
Top Mark
FDA38N30
Package
TO-3PN
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics
T C = 25°C unless otherwise noted .
Symbol
Parameter
Conditions
Min.
Typ.
Max
Unit
Off Characteristics
BV DSS
Δ BV DSS
/ Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
I D = 250 μ A, V GS = 0 V, T C = 25 o C
I D = 250 μ A, Referenced to 25 ° C
V DS = 300 V, V GS = 0 V
V DS = 240 V, T C = 125 o C
V GS = ±30 V, V DS = 0 V
300
-
-
-
-
-
0.3
-
-
-
-
-
1
10
±100
V
V/ ° C
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V DS = V GS , I D = 250 μ A
V GS = 10 V, I D = 19 A
V DS = 20 V, I D = 19 A
3.0
-
-
-
0.070
6.3
5.0
0.085
-
V
Ω
S
Dynamic Characteristics
C iss
C oss
C rss
Q g(tot)
Q gs
Q gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DS = 25 V, V GS = 0 V,
f = 1 MHz
V DS = 240 V, I D = 38 A,
V GS = 10 V
(Note 4)
-
-
-
-
-
-
2600
500
60
60
17
28
-
-
-
-
-
-
pF
pF
pF
nC
nC
nC
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 150 V, I D = 38 A,
R G = 25 Ω, V GS = 10 V
(Note 4)
-
-
-
-
53
110
118
54
69
143
153
70
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
-
-
-
-
38
150
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 38 A
V GS = 0 V, I SD = 38 A,
dI F /dt = 100 A/ μ s
-
-
-
-
315
4.0
1.4
-
-
V
ns
μ C
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 1.7 mH, I AS = 38 A, V DD = 50 V, R G = 25 Ω , starting T J = 25 ° C.
3. I SD ≤ 38 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2011 Fairchild Semiconductor Corporation
FDA38N30 Rev. C1
2
www.fairchildsemi.com
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